Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Reexamination Certificate
2011-07-12
2011-07-12
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
C438S100000, C438S131000, C438S151000, C438S688000, C438S689000, C257S014000, C257S072000, C257S192000, C257S226000, C257S296000, C257SE21327
Reexamination Certificate
active
07977131
ABSTRACT:
The present invention provides a method of manufacturing a nano-array electrode with a controlled nano-structure by filling a compound having an electron-accepting structure or an electron donating structure into the fine pores of an anodic-oxide porous alumina film obtained by anodically oxidizing aluminum in electrolyte. The spaces defined between the nano-arrays formed of the compound by removing the alumina film are filled with a compound having an electron-donating structure if the nano-arrays have an electron-accepting structure and a compound having an electron-accepting structure if the nano-arrays have an electron-donating structure. A high-performance, high-efficiency photoelectric converting device comprising a nano-array electrode manufactured by the method is also disclosed.
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Asano Tsuyoshi
Kubo Takaya
Nishikitani Yoshinori
Lee Kyoung
Nippon Oil Corporation
Panitch Schwarze Belisario & Nadel LLP
Richards N Drew
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