Method for manufacturing MTJ cell of magnetic random access...

Details Method for manufacturing MTJ cell of magnetic random access... Method for manufacturing MTJ cell of magnetic random access...

2005-02-01

2005-02-01

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S653000, C438S783000, C438S785000, C438S971000, C257S296000, C257S285000, C257S300000

Reexamination Certificate

active

06849466

ABSTRACT:
A method for fabricating a MTJ cell of a magnetic random access memory (MRAM) using a semiconductor film as a tunnel barrier layer is disclosed. The method comprises the steps of: forming a pinned ferromagnetic layer on a connection layer; forming a tunnel barrier layer using a semiconductor film on the pinned ferromagnetic layer; and forming a free ferromagnetic layer on the tunnel barrier layer.

REFERENCES:
patent: 6664579 (2003-12-01), Kim et al.

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