Method for manufacturing MOSFET having an LDD structure

Details Method for manufacturing MOSFET having an LDD structure Method for manufacturing MOSFET having an LDD structure

1994-06-03

1995-06-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 44, H01L 21265

Patent

active

054242290

ABSTRACT:
A dielectric film, such as a silicon nitride film, is formed on a p type silicon substrate. An opening is formed in the silicon nitride film. With the silicon nitride film used as a mask, a phosphorns ion is implanted into the surface portion of the substrate in a direction of an angle .theta. (0.degree.<.theta.<90.degree.) to a substrate face. An n.sup.- diffusion layer is formed in the surface portion of the substrate at an edge area of the opening such that the n.sup.- diffusion layer is located beneath a gate electrode corresponding to the opening. A gate oxide film is formed in that opening area and a polysilicon film is formed over the gate oxide film. A gate electrode is formed after the silicon nitride film has been removed. With the gate electrode used as a mask, an impurity ion is implanted into the surface portion of the substrate to provide source and drain regions. The drain region is located contagious to an n.sup.- diffusion layer. The n.sup.- diffusion layer is formed beneath the gate electrode only.

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