Method for manufacturing MOS type semiconductor device

Details Method for manufacturing MOS type semiconductor device Method for manufacturing MOS type semiconductor device

1996-12-03

1998-02-24

Niebling, John

Fishing, trapping, and vermin destroying

437 41, 437203, 148DIG126, H01L 21265

Patent

active

057211485

ABSTRACT:
In a method for manufacturing a MOS type semiconductor device, a first conductivity type layer is formed in a surface layer of a second conductivity type base region on a first conductivity type drain layer, a gate trench is formed in the base region, and a gate electrode is then formed in the gate trench through a gate insulation film. An exposed surface of the obtained structure is covered with an inter-layer insulation film, and a source contact trench that reaches inside the second conductivity type base region is formed through the inter-layer insulation film and first conductivity type layer while a gate contact trench that reaches inside the gate electrode is formed through the inter-layer insulation film. A portion of the inter-layer insulation film and the source contact trench are covered with a first metal film that forms a source electrode, and another portion of the inter-layer insulation film and the gate contact trench are covered with a second metal film that forms a gate metal electrode.

REFERENCES:
patent: 4984030 (1991-01-01), Sunami et al.
patent: 5081052 (1992-01-01), Kobayashi et al.
patent: 5208172 (1993-05-01), Fitch et al.
patent: 5244824 (1993-09-01), Sivan
patent: 5424231 (1995-06-01), Yang
patent: 5429970 (1995-07-01), Hong
patent: 5474943 (1995-12-01), Hshieh et al.
patent: 5510287 (1996-04-01), Chen et al.
patent: 5514604 (1996-05-01), Brown
patent: 5576245 (1996-11-01), Cogan et al.

Affiliated with

Also associated with

Rating

Method for manufacturing MOS type semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing MOS type semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing MOS type semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1874800