Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2008-04-15
2008-04-15
Robinson, Mark A. (Department: 4122)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S649000, C257S639000, C438S724000, C438S744000, C438S757000, C438S769000, C438S791000
Reexamination Certificate
active
11483143
ABSTRACT:
Disclosed is a method for fabricating a MOS transistor. The present method includes forming a buffer layer pattern including nitrogen on the semiconductor substrate; forming a gate insulating layer and a gate electrode on the exposed substrate surface; forming a LDD region in the substrate under the buffer pattern; forming a spacer on a top surface of the buffer pattern and sidewalls of the gate electrode; and forming a source/drain region in the substrate under the buffer pattern.
REFERENCES:
patent: 6518636 (2003-02-01), Segawa et al.
patent: 2005/0266632 (2005-12-01), Chen et al.
patent: 2007/0010073 (2007-01-01), Chen et al.
Ahmed Selim
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Robinson Mark A.
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