Method for manufacturing MOS semiconductor devices

Details Method for manufacturing MOS semiconductor devices Method for manufacturing MOS semiconductor devices

1988-07-12

1990-04-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 43, 437 49, 437192, 437194, H01L 21265

Patent

active

049160842

ABSTRACT:
A method for manufacturing MOS semiconductor devices comprises the steps of forming a oxidation resistant film on the upper and side surfaces of a gate electrode which is formed on a silicon substrate via an oxide film and whose upper and side surfaces are coated with an insulation oxide film, effecting thermal oxidation with the oxidation resistant film as a mask, removing the oxidation resistant film and the oxide film lying directly under the oxidation resistant film to expose the surface of the substrate, doping impurity into the exposed surface area of the substrate to form impurity regions, forming a silicon layer on the exposed surface of the substrate by a growth process, forming a first refractory metal layer on the entire surface of the structure, forming an insulation film on the first refractory metal layer, selectively removing the insulation film to form a contact hole, forming a second refractory metal layer in the contact hole by a deposition process, removing the insulation film and the first refractory metal layer except that part thereof which lies directly under the second refractory metal layer, depositiong an interlayer insulation film on the entire surface of the structure, planarizing the surface of the interlayer insulation film and then etching back the interlayer insulation film to expose the surface of the second refractory metal layer, and forming a metal wiring layer on the exposed surface of the second refractory metal layer.

REFERENCES:
patent: 4378628 (1983-04-01), Levinstein
patent: 4488348 (1984-12-01), Jolly

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