Method for manufacturing MOS/CMOS monolithic integrated circuits

Details Method for manufacturing MOS/CMOS monolithic integrated circuits Method for manufacturing MOS/CMOS monolithic integrated circuits

1988-12-15

1990-11-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437193, 437918, 437985, 148DIG19, 148DIG136, 148DIG106, H01L 21283

Patent

active

049686453

ABSTRACT:
A monolithic integrated circuit of either the MOS or CMOS type comprises an intermediate layer of polycrystalline silicon, a layer of a silicide of a refractory metal overlying said polycrystalline silicon layer, and regions of preset area and preset paths formed in the polycrystalline silicon layer and the silicide layer; the preset area regions and preset paths forming respectively high resistivity resistances and low resistivity interconnection lines for an intermediate connection level.

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