Method for manufacturing mesa semiconductor device

Details Method for manufacturing mesa semiconductor device Method for manufacturing mesa semiconductor device

2007-03-20

2007-03-20

Chowdhury, Tarifur (Department: 2112)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having a perfecting coating

C438S113000, C438S460000, C438S700000, C438S704000, C438S758000

Reexamination Certificate

active

11057188

ABSTRACT:
A semiconductor element is formed by forming at least one p-n junction on a semiconductor wafer (1), a recess (8) is formed around the semiconductor element by etching, an insulating film (5) is formed on a surface of the recess, and a metal film (6a) is deposited, by sputtering or vacuum evaporation, on a surface of an exposed semiconductor layer (4) and the insulating film (5) on the semiconductor wafer. And after improving an adhesion between the semiconductor layer and the metal film by a thermal treatment, the metal film on the insulating film is removed selectively by blasting high pressured water on the surface of the semiconductor wafer. Consequently, a mesa semiconductor chip is obtained by cutting the semiconductor wafer under the recess. As a result, an electrode of the mesa semiconductor device obtained by the above method is formed uniformly on a surface of the semiconductor layer and is not formed on the insulating film.

REFERENCES:
patent: 4179794 (1979-12-01), Kosugi et al.
patent: 6221751 (2001-04-01), Chen et al.
patent: 6316287 (2001-11-01), Zandman et al.
patent: 6429095 (2002-08-01), Sakaguchi et al.
patent: 6696353 (2004-02-01), Minn et al.
patent: 56-058232 (1981-05-01), None
patent: 01-232719 (1989-09-01), None

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