Method for manufacturing memory devices

Details Method for manufacturing memory devices Method for manufacturing memory devices

1998-09-02

2000-11-14

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430313, 356346, G03F 736

Patent

active

061467952

ABSTRACT:
Tunnel oxide degradation is reduced by reducing residual photoresist material in open areas of a mask pattern. Embodiments include detecting residual photoresist in an exposed underlying region of a substrate by x-ray spectroscopy and descumming in response to detected residual photoresist.

REFERENCES:
patent: 5481109 (1996-01-01), Ninomiya

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