Method for manufacturing memory device

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S003000, C257SE21214

Reexamination Certificate

active

07825027

ABSTRACT:
A method for manufacturing a memory device including a ferroelectric memory array region and a logic circuit region is provided. The method includes the steps of: forming, above a base substrate, a plurality of ferroelectric capacitors in the ferroelectric memory array region; forming a wiring layer above the base substrate in the logic circuit region; forming an interlayer dielectric layer that covers the ferroelectric capacitors and the wiring layer; etching the interlayer dielectric layer formed at least in the ferroelectric memory array region to form a concave section; polishing the interlayer dielectric layer by a CMP (chemical mechanical polishing) method; etching the interlayer dielectric layer above the ferroelectric capacitors and the wiring layer to form contact holes; and forming contact sections in the contact holes.

REFERENCES:
patent: 6004839 (1999-12-01), Hayashi et al.
patent: 6218197 (2001-04-01), Kasai
patent: 6380047 (2002-04-01), Bandyopadhyay et al.
patent: 6465826 (2002-10-01), Kasai
patent: 2003/0127703 (2003-07-01), Hikosaka et al.
patent: 2008/0265298 (2008-10-01), Ozaki
patent: 10-284702 (1998-10-01), None
patent: 2000-216353 (2000-08-01), None
patent: 2001-015703 (2001-01-01), None
patent: 2005-051135 (2005-02-01), None
patent: 2005-064314 (2005-03-01), None
patent: 2006-121026 (2006-05-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4243034

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.