Method for manufacturing memory device

Details Method for manufacturing memory device Method for manufacturing memory device

2008-11-14

2010-11-02

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S003000, C257SE21214

Reexamination Certificate

active

07825027

ABSTRACT:
A method for manufacturing a memory device including a ferroelectric memory array region and a logic circuit region is provided. The method includes the steps of: forming, above a base substrate, a plurality of ferroelectric capacitors in the ferroelectric memory array region; forming a wiring layer above the base substrate in the logic circuit region; forming an interlayer dielectric layer that covers the ferroelectric capacitors and the wiring layer; etching the interlayer dielectric layer formed at least in the ferroelectric memory array region to form a concave section; polishing the interlayer dielectric layer by a CMP (chemical mechanical polishing) method; etching the interlayer dielectric layer above the ferroelectric capacitors and the wiring layer to form contact holes; and forming contact sections in the contact holes.

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