Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-07-18
2006-07-18
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S238000, C438S382000
Reexamination Certificate
active
07078238
ABSTRACT:
Magnetoresistive devices are formed on the insulating surface of a substrate made of silicon. The devices are connected in series through an insulating film using a wiring layer formed on the surface of the substrate. An insulating film for passivation is formed to cover the devices and the wiring layer. A magnetic shield layer of Ni—Fe alloy is formed on the passivation insulating film through an organic film for relieving thermal stress to cover one of the devices. After removal of the sensor chip containing the magnetoresistive devices and other components from the wafer, the chip is bonded to a lead frame through an Ag paste layer by heat treatment. Preferably, the magnetic shield layer is made of a Ni—Fe alloy having a Ni content of 69% or less.
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Mochizuki Osamu
Murata Yuichiro
Natsume Kiyoshi
Suzuki Toshihisa
Suzuki Yasutoshi
Denso Corporation
Posz & Bethards, PLC
Tsai H. Jey
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