Method for manufacturing magnetic random access memory

Details Method for manufacturing magnetic random access memory Method for manufacturing magnetic random access memory

2006-03-28

2006-03-28

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S295000, C257SE27006

Reexamination Certificate

active

07019370

ABSTRACT:
The present invention discloses an MRAM wherein a write word line is disposed between every other set of the word lines and a ground line is disposed between every other bit lines. This structure of MRAM in accordance with the present invention, Which is similar to folded bit line DRAM having a unit cell area of 8F2, allows read and write operation of MRAM with reduced number of required lines.

REFERENCES:
patent: 5940319 (1999-08-01), Durlam et al.
patent: 2002/0080641 (2002-06-01), Asao et al.
patent: 2003/0198080 (2003-10-01), Iwata

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