Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2004-07-30
2010-11-09
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C438S003000, C365S157000, C360S324000, C360S313000
Reexamination Certificate
active
07829962
ABSTRACT:
A method for manufacturing magnetic field detection devices comprises the operations of manufacturing a magneto-resistive element comprising regions with metallic conduction and regions with semi-conductive conduction. The method comprises the following operations: forming metallic nano-particles to obtain regions with metallic conduction; providing a semiconductor substrate; and applying metallic nano-particles to the porous semiconductor substrate to obtain a disordered mesoscopic structure. A magnetic device comprises a spin valve, which comprises a plurality of layers arranged in a stack which in turn comprises at least one free magnetic layer able to be associated to a temporary magnetisation (MT), a spacer layer and a permanent magnetic layer associated to a permanent magnetisation (MP). The spacer element is obtained by means of a mesoscopic structure of nanoparticles in a metallic matrix produced in accordance with the inventive method for manufacturing magneto-resistive elements.
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Robert O'Handley, Modern Magnetic Materials Principles and Applications, 2000.
International Search Report and Annex.
Martorana Brunetto
Perlo Piero
Pullini Daniele
C.R.F. Società Consortile per Azioni
Nixon & Vanderhye P.C.
Smith Bradley K
Valentine Jami M
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