Method for manufacturing low resistance sub-micron gate Schottky

Details Method for manufacturing low resistance sub-micron gate Schottky Method for manufacturing low resistance sub-micron gate Schottky

1985-06-14

1986-11-11

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 29591, 427 88, 148DIG20, H01L 21441

Patent

active

046214151

ABSTRACT:
A method for manufacturing a sub-micron length Schottky barrier gate electrode. A wafer is coated with a first photoresist layer, which is exposed and developed to leave a substantially vertical line of photoresist having a sub-micron thickness. A dielectric layer is then deposited and the line of photoresist lifted off, leaving a dielectric coating layer with a sub-micron opening atop the wafer. The dielectric layer provides a mask for subsequent etching and metallization steps.

REFERENCES:
patent: 4213840 (1980-07-01), Omori et al.
patent: 4253888 (1981-03-01), Kikuchi

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