Method for manufacturing liquid discharge head, substrate...

Details Method for manufacturing liquid discharge head, substrate... Method for manufacturing liquid discharge head, substrate...

2005-02-22

2005-02-22

Mills, Gregory (Department: 1763)

Etching a substrate: processes

Forming or treating thermal ink jet article

C438S795000

Reexamination Certificate

active

06858152

ABSTRACT:
An ink supply port is opened in an Si substrate on which an ink discharge energy generating element is formed, by anisotropic etching, from a back surface opposite to a surface on which the ink discharge energy generating element is formed. When the anisotropic etching is effected, OSF (oxidation induced laminate defect) remains on the back surface of the Si substrate with OSF density equal to or greater than 2×104parts/cm2and a length of OSF equal to or greater than 2 μm.

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