Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2008-08-21
2011-10-04
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S027000, C438S042000, C257SE21533, C257SE21535
Reexamination Certificate
active
08030104
ABSTRACT:
A method for manufacturing a liquid crystal display device is disclosed. The method includes forming a gate electrode, a gate pad, a gate line on a substrate by using a first mask; forming a gate insulating film, an active layer, an ohmic contact layer and a conductive layer in sequence above the substrate including the gate electrode, the gate line and the gate pad; forming an active pattern, an ohmic contact pattern, source/drain electrodes, a data line and a data pad by using a second mask; forming a pixel electrode on the gate insulating film in a pixel region by using a third mask, to contact with the drain electrode; exposing the active pattern by etching the ohmic contact pattern using the source/drain electrodes as an etching mask; forming a passivation film above the substrate including the source/drain electrodes, the data line and the data pad; forming a first contact hole for exposing the gate pad and a second contact hole for exposing the data pad by etching the passivation and/or gate insulating films using a fourth mask; and forming a common electrode having a plurality of holes on the substrate by using a fifth mask.
REFERENCES:
patent: 2003/0123009 (2003-07-01), Jo et al.
patent: 2004/0125327 (2004-07-01), Choi et al.
Park Dae Lim
Park Sung Il
Jefferson Quovaunda V
LG Display Co. Ltd.
Morgan & Lewis & Bockius, LLP
Smith Matthew
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