Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2007-08-07
2007-08-07
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S046000, C438S455000
Reexamination Certificate
active
10960616
ABSTRACT:
A method for manufacturing a light-emitting diode (LED) is described. The method comprises: providing a temporary substrate; forming an illuminant epitaxial structure on the temporary substrate; forming a first transparent conductive layer on the illuminant epitaxial structure; forming a metal substrate on the first transparent conductive layer; forming an adhesion layer on the metal substrate; providing a supporting substrate, wherein the supporting substrate is connected to the metal substrate by the adhesion layer; removing the temporary substrate, so as to expose a surface of the illuminant epitaxial structure; forming a second transparent conductive layer on the exposed surface of the illuminant epitaxial structure; and forming an electrode on a portion of the second transparent conductive layer.
REFERENCES:
patent: 2003/0164503 (2003-09-01), Chen
Chang Chia-Sheng
Chen Wei-Shou
Chen Yen-Wei
Lo Hsin-Ming
Shei Shih-Chang
Glenn Michael A.
Glenn Patent Group
Pham Long
South Epitaxy Corporation
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