Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2011-08-09
2011-08-09
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S478000, C438S584000
Reexamination Certificate
active
07993945
ABSTRACT:
An object is to provide a method for manufacturing a light-emitting device with high definition, high light-emitting characteristics, and the long lifetime by employing a method in which a desired evaporation pattern can be formed and an excess evaporation of a material layer which is to be the transfer layer is prevented and in which deterioration of the material or the like is hard to occur in a transfer step. This is a method for manufacturing a light-emitting device, in which irradiation with first light is performed to pattern a material layer over a first substrate which is an evaporation donor substrate and irradiation with second light is performed to evaporate the material layer patterned onto a second substrate which is a deposition target substrate.
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Ibe Takahiro
Ikeda Hisao
Geyer Scott B
Husch & Blackwell LLP
Semiconductor Energy Laboratory Co,. Ltd.
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