Method for manufacturing LCD device capable of avoiding short ci

Details Method for manufacturing LCD device capable of avoiding short ci Method for manufacturing LCD device capable of avoiding short ci

1994-12-27

1999-02-16

Wilczewski, Mary

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438158, 438159, H01L 2184, H01L 21336, G02F 1136

Patent

active

058720219

ABSTRACT:
In a method for manufacturing an LCD device where a gate insulating layer is formed on an insulating substrate and a signal line pattern layer and a pixel electrode pattern layer are formed on a signal line forming area and a pixel electrode forming area, respectively, of the gate insulating layer, a part of the gate insulating layer between the signal line forming area and the pixel electrode forming area is etched.

REFERENCES:
patent: 5032531 (1991-07-01), Tsutsui et al.
patent: 5075244 (1991-12-01), Sakai et al.
patent: 5166086 (1992-11-01), Takeda et al.

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