Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1989-12-22
1992-08-18
Beck, Shrive
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
4272553, 4272551, 427 62, 4272552, 505734, C23C 1600
Patent
active
051400030
ABSTRACT:
At least one layer from an oxide-ceramic superconductor material with a high transition temperature is produced on a substrate using a CVD-process. As parent materials, at least one vaporizable composition of each of the metallic components of the superconductor material is provided respectively, and these parent compositions are vaporized respectively at a predetermined temperature and with a predetermined partial pressure. In addition, at least one gaseous coreactant is provided, which is reactive with the parent compositions, the parent compositions as well as a minimum of one coreactant are dosed respectively by means of a carrier gas stream and united in a gas mixture with a predetermined mixture ratio, and to form the superconductor material, the conditions of reaction are adjusted using the energy supply for a reaction of or with the parent compositions and a minimum of one coreactant. A gaseous coreactant containing at least ammonia or organic amines is fed to the gas mixture. Gaseous water is advantageously admixed with this coreactant.
REFERENCES:
patent: 4501602 (1985-02-01), Miller et al.
patent: 4558144 (1985-12-01), Fay et al.
A. D. Berry et al., Applied Physics Letters 52 (20) 16 May 1988, pp. 1743-1745.
J. Nakamori et al., Japanese Journal of Applied Phys., vol. 27, No. 7, Jul. 88, pp. L1265-L1267.
H. Yamane et al., Japanese Journal of Applied Phys., vol. 27, No. 7, Jul. 1988, L1275-L1276.
A. J. Panson et al., Applied Physics Letters 53 (18), 31 Oct. 1988, pp. 1756-1758.
Beck Shrive
Siemens Aktiengesellschaft
Utech Benjamin L.
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