Method for manufacturing integrated circuit device

Details Method for manufacturing integrated circuit device Method for manufacturing integrated circuit device

1979-12-21

1982-02-02

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

29589, 148 15, 148190, H01L 21425, H01L 2174

Patent

active

043132553

ABSTRACT:
Disclosed is a method for manufacturing an integrated circuit device which comprises the steps of preparing a silicon substrate having an isolated first region of a first conductivity type, selectively forming on the first region a polycrystalline silicon layer containing an impurity of the first conductivity type, implanting the first region including the polycrystalline silicon layer with an ion of an impurity of a second conductivity type having higher diffusion coefficient than that of the impurity of the first conductivity type, and heating the substrate, whereby the implanted impurity of the second conductivity type is diffused into the first region to form a second region of the second conductivity type and the impurity of the first conductivity type in the polycrystalline silicon layer is diffused into the second region to form a third region of the first conductivity type.

REFERENCES:
patent: 3523042 (1970-08-01), Bower et al.
patent: 3798084 (1974-03-01), Lyons
patent: 4063967 (1977-12-01), Graul

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