Method for manufacturing insulation separating the active region

Details Method for manufacturing insulation separating the active region Method for manufacturing insulation separating the active region

1987-07-31

1988-03-15

Hearn, Brian

Fishing, trapping, and vermin destroying

437 57, 437 61, 437238, H01L 2176

Patent

active

047313439

ABSTRACT:
The invention relates to a method for the manufacture of insulating portions separating the active regions of a VLSI CMOS circuit wherein an oxide coated silicon substrate is etched in those regions in which minimal insulation is to be required by etching trenches in the oxide insulating layers overlying the minimal insulation regions and generating field oxide regions in the remaining portions separating the active regions. The etching is preferably carried out by a combination of dry and wet etching steps. The field oxide regions may be produced by the well known local oxidation of silicon (LOCOS).

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