Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...
Reexamination Certificate
2006-12-19
2006-12-19
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step of heat treating...
C117S005000, C117S008000, C117S009000, C117S094000, C117S095000
Reexamination Certificate
active
07150788
ABSTRACT:
A method of adjusting the in-plane lattice constant of a substrate and an in-plane lattice constant adjusted substrate are provided. A crystalline substrate (1) made of SrTiO3is formed at a first preestablished temperature thereon with a first epitaxial thin film (2) made of a first material, e. g., BaTiO3, and then on the first epitaxial thin film (2) with a second epitaxial thin film (6) made of a second material, e. g., BaxSr1−xTiO3(where 0<x<1), that contains a substance of the first material and another substance which together therewith is capable of forming a solid solution in a preestablished component ratio. Thereafter, the substrate is heat-treated at a second preselected temperature. Heat treated at the second preestablished temperature, the substrate has dislocations (4) introduced therein and the second epitaxial thin film (6) has its lattice constant relaxed to a value close to the lattice constant of bulk crystal of the second material. Selecting the ratio of components x of the other substance in the second material allows a desired in-plane lattice constant to be realized.
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Fukumura Tomoteru
Kawasaki Masashi
Koinuma Hideomi
Terai Kota
Japan Science and Technology Agency
Kunemund Robert
Westerman, Hattori, Daniels & Adrian , LLP.
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