Method for manufacturing image sensor

Details Method for manufacturing image sensor Method for manufacturing image sensor

2011-07-12

2011-07-12

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S069000, C257SE31124

Reexamination Certificate

active

07977148

ABSTRACT:
A method for manufacturing an image sensor includes forming a photolithography key in a scribe lane of a first substrate over which circuitry is formed in an active region. A photodiode is formed on an active region of a second substrate. The second substrate is bonded to the first substrate such that the photodiode is electrically connected to the circuitry. The photolithography key in the scribe lane of the first substrate is opened. A pattern is formed on the active region of the bonded second substrate using the opened photolithography key on/over the first substrate.

REFERENCES:
patent: 7541256 (2009-06-01), Swain et al.
patent: 2007/0207566 (2007-09-01), Fu et al.
patent: 2008/0297634 (2008-12-01), Uya
patent: 2009/0003763 (2009-01-01), Mohammed et al.
patent: 2009/0056098 (2009-03-01), Payne

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