Method for manufacturing III metal nitride single crystal

Details Method for manufacturing III metal nitride single crystal Method for manufacturing III metal nitride single crystal

2011-08-02

2011-08-02

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

C117S054000, C117S058000, C117S063000, C117S952000

Reexamination Certificate

active

07988784

ABSTRACT:
It is used a substrate main body1having a side face1band a pair of main faces1aand an underlying film2of a single crystal of a nitride of a metal belonging to the group III formed at least on one main face of the substrate main body1. A single crystal3of a nitride of a metal belonging to the group III is grown on the main face1aof the substrate main body1by a liquid phase process. The underlying film2has a shape of a convex figure in a plan view. A surface4without the underlying film thereon surrounds the entire circumference of the underlying film2. The single crystal3of a nitride of a metal belonging to the group III grown on the underlying film2is not brought into contact with a single crystal of a nitride of a metal belonging to group III formed on another underlying film.

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