Method for manufacturing high voltage field-effect transistors

Details Method for manufacturing high voltage field-effect transistors Method for manufacturing high voltage field-effect transistors

1974-05-17

1976-06-29

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, H01L 734

Patent

active

039665151

ABSTRACT:
A method of manufacturing field-effect transistors is disclosed which includes the steps of growing an epitaxial layer on a substrate wafer, forming channels of the desired conductivity on the wafer, forming the gate electrodes on the wafer and then forming source and drain electrodes on the wafer. The gate electrodes are formed by first masking the gate electrode area and performing a first boron deposition and boron diffusion step. A second boron deposition and diffusion step is then provided to enable the resultant field-effect transistor to operate at higher voltages.

REFERENCES:
patent: 3560278 (1971-02-01), Sanera
patent: 3676231 (1972-07-01), Medvecky et al.
patent: 3775197 (1973-11-01), Sahagun

Affiliated with

Also associated with

Rating

Method for manufacturing high voltage field-effect transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing high voltage field-effect transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing high voltage field-effect transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1275318