Method for manufacturing high efficiency light-emitting diodes

Details Method for manufacturing high efficiency light-emitting diodes Method for manufacturing high efficiency light-emitting diodes

2006-12-26

2006-12-26

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S022000, C438S024000, C438S048000, C438S508000, C257S079000, C257S099000

Reexamination Certificate

active

07153713

ABSTRACT:
A method for manufacturing a high efficiency light-emitting diode (LED) is disclosed. In the method, a substrate is provided, in which an N-type buffer layer, an N-type cladding layer and an active layer are stacked on the substrate in sequence. A first P-type cladding layer is formed on the active layer. Next, a growth-interruption step is performed, and a catalyst is introduced to form a plurality of nuclei sites on a surface of the first P-type cladding layer. A second P-type cladding layer is formed on the first P-type cladding layer according to the nuclei sites, so that the second P-type cladding layer has a surface with a plurality of mesa hillocks. Then, a contact layer is formed on the second P-type cladding layer. Subsequently, a transparent electrode is formed on the contact layer.

REFERENCES:
patent: 2002/0104996 (2002-08-01), Kuo et al.
patent: 2006/0102930 (2006-05-01), Wu et al.

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