Method for manufacturing granular silicon crystal

Details Method for manufacturing granular silicon crystal Method for manufacturing granular silicon crystal

2008-01-29

2008-01-29

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S014000, C117S214000

Reexamination Certificate

active

07323047

ABSTRACT:
In a method for manufacturing a granular silicon crystal by allowing silicon melt in a crucible to be granularly discharged and fallen from a nozzle part composed of silicon carbide or silicon nitride, and cooling and solidifying the granular silicon melt during falling, a carbon source is added when the nozzle part is composed of silicon carbide, and a nitrogen source is added when the nozzle part is composed of silicon nitride, to the silicon melt in the crucible. Thereby, melt droplets of uniform size can be generated, so that granular silicon crystals having narrow variations in particle size can be manufactured at high productivity and superior reproducibility.

REFERENCES:
patent: 4188177 (1980-02-01), Kilby et al.
patent: 2004-342827 (2004-11-01), None
patent: WO99/22048 (1999-05-01), None

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