Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Patent
1994-11-22
1997-08-12
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
438476, 438516, 438791, 438928, H01L 21318
Patent
active
056565100
ABSTRACT:
A method is provided for optimizing the manufacturing yield of semiconductors. The method provides a backside dielectric layer which protects the semiconductor from electro-static discharge damage during manufacturing. The backside dielectric layer may be a nitride. The backside dielectric layer may be an oxide. The method also provides for optimized ion implantation flood gun current control.
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Ghandhi, "VLSI Fabrication Principles, silicon and gallium arsenide", 1983, pp. 427-430.
Chrapacz Terry
Moerschel Kenneth Gordon
Possanza William A.
Prozonic Michael Allen
Sung Janmye
Chaudhari Chandra
Lucent Technologies - Inc.
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