Method for manufacturing gallium nitride (GaN) based single...

Details Method for manufacturing gallium nitride (GaN) based single... Method for manufacturing gallium nitride (GaN) based single...

2005-06-07

2005-06-07

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S459000, C438S463000, C438S479000

Reexamination Certificate

active

06902989

ABSTRACT:
A method for manufacturing a gallium nitride (GaN)-based single crystalline substrate includes the steps of (a) forming a GaN-based single crystalline bulk on an upper surface of a growth substrate; (b) forming grooves through the growth substrate so that the growth substrate is patterned and divided into several units by the grooves, each of the grooves having a designated width; and (c) separating the GaN-based single crystalline bulk from the growth substrate by irradiating a laser beam on a lower surface of the growth substrate.

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