Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-03-01
2005-03-01
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S752000, C257S103000, C257S079000, C257S613000, C257S615000
Reexamination Certificate
active
06861270
ABSTRACT:
A method for manufacturing a GaN compound semiconductor which can improve light emitting efficiency even when dislocations are present. An n type AlGaN layer, a undoped AlGaN layer, and a p type AlGaN layer are laminated on a substrate to obtain a double hetero structure. When the undoped AlGaN layer is formed, droplets of Ga or Al are formed on the n type AlGaN layer. The compositional ratio of Ga and Al in the undoped AlGaN layer varies due to the presence of the droplets, creating a spatial fluctuation in the band gap. Because of the spatial fluctuation in the band gap, the percentage of luminous recombinations of electrons and holes is increased.
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Jackson Jerome
Nguyen Joseph
Nitride Semiconductors Co., Ltd.
Sakai Shiro
LandOfFree
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