Method for manufacturing fluorinated gate oxide layer

Details Method for manufacturing fluorinated gate oxide layer Method for manufacturing fluorinated gate oxide layer

1995-12-01

1997-11-04

Niebling, John

Fishing, trapping, and vermin destroying

437238, 437241, 437242, H01L 2102

Patent

active

056839464

ABSTRACT:
A method for manufacturing a gate oxide layer containing fluorine is disclosed. The method includes steps of providing a substrate; depositing a fluorinated oxide layer over said substrate; and oxidizing said fluorinated oxide layer at a high temperature. The fluorinated oxide layer according to the present invention exhibits good properties in radiation hardness, hot carrier resistance and breakdown endurance. Thus, it is an excellent method for easily and cost-effectively manufacturing reliable and consistent wafers.

REFERENCES:
patent: 5334552 (1994-08-01), Homma
patent: 5468682 (1995-11-01), Homma
patent: 5571576 (1996-11-01), Qian et al.

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