Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor...
Reexamination Certificate
2011-03-01
2011-03-01
Everhart, Caridad M (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
C257S064000, C257SE31043, C257SE31045
Reexamination Certificate
active
07897966
ABSTRACT:
For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a μc-Si layer (19) deposited on a large-surface substrate, (15) before each substrate is single treated at least parts of the addressed wall are precoated with a dielectric layer (13).
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Quoc Hai Tran
Villette Jerome
Everhart Caridad M
Oerlikon Solar AG, Trubbach
Pearne & Gordon LLP
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