Method for manufacturing field emission device

Details Method for manufacturing field emission device Method for manufacturing field emission device

1998-07-28

1999-11-30

Ramsey, Kenneth J.

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 50, H01J 902

Patent

active

059932775

ABSTRACT:
A method for manufacturing a field emission device includes the steps of: forming a first sacrificial film on a substrate; forming a recess which has side walls almost perpendicular to the first sacrificial film and which extends up to the substrate; forming a second sacrificial film on the first sacrificial film and in the recess; etching back the second sacrificial film so as to leave side spacers on the side walls of the recess; forming a first conductive film as a gate electrode on the first sacrificial film, the side spacers and an exposed part of the substrate; etching back the first conductive film so as to expose the substrate at the bottom of the recess; forming a first insulation film on the first conductive film; forming a second conductive film as an emitter electrode on the first insulation film; and exposing an end portion of the second conductive film.

REFERENCES:
patent: 5720642 (1998-02-01), Hattori
patent: 5795208 (1998-08-01), Hattori
patent: 5839934 (1998-11-01), Hattori
M. Urayama et al., "Silicon Field Emitter Capable of Low Voltage Emisson", Technical Report of IEICE, ED93-147 (1993-12), pp. 89-93.

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