Method for manufacturing field effect transistors

Details Method for manufacturing field effect transistors Method for manufacturing field effect transistors

1989-05-15

1992-05-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 42, 437 48, 437 50, 437 51, 437 52, 437 58, H01L 21336, H01L 27088, H01L 27112, H01L 27115

Patent

active

051148706

ABSTRACT:
The present invention deals with a semiconductor memory circuit device, in which a memory array portion of a rectangular shape consisting of semiconductor non-volatile memory elements is formed on a main surface of the semiconductor substrate, a low voltage driver circuit (decoder) is formed along a side of the memory array portion, and a high voltage driver circuit is formed along an opposite side of the memory array portion. This permits a reduction in word line length and avoids crossing of the word lines to permit increased operation speed and, particularly, increased reading speed.

REFERENCES:
patent: 3853633 (1974-12-01), Armstrong
patent: 3983572 (1976-09-01), Johnson
patent: 4027380 (1977-06-01), Deal et al.
patent: 4110899 (1978-09-01), Nagasawa et al.
patent: 4179311 (1979-12-01), Athanas
patent: 4268321 (1981-05-01), Meguro
patent: 4285116 (1981-08-01), Meguro
patent: 4306916 (1981-12-01), Wollesen et al.
patent: 4343079 (1982-08-01), Jochems
patent: 4377818 (1983-03-01), Kuo et al.
patent: 4384399 (1983-05-01), Kuo
patent: 4385432 (1983-05-01), Kuo et al.
patent: 4586238 (1986-05-01), Yatsuda et al.
patent: 4851364 (1989-07-01), Yatsuda et al.
patent: 4950616 (1990-08-01), Kahng et al.

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