Method for manufacturing field effect controlled semiconductor c

Details Method for manufacturing field effect controlled semiconductor c Method for manufacturing field effect controlled semiconductor c

1995-11-03

1996-12-10

Quach, T. N.

Fishing, trapping, and vermin destroying

437 26, 437 40, 437203, 148DIG126, H01L 218224, H01L 218234

Patent

active

055830609

ABSTRACT:
The base zones of MOSFETs and IGBTs are generated by implanting dopants of the second conductivity type into the surface of a first layer of the first conductivity type, and a second layer of the first conductivity type is deposited thereon. During the deposition, the dopants diffuse up to the surface of the second layer and form base zones. The base zones are thereby provided with a laterally expanded region of high conductivity under the surface through which the minority carriers can flow off to the source electrode with low voltage drop.

REFERENCES:
patent: 4466176 (1984-08-01), Temple
patent: 4823172 (1989-04-01), Mihara
patent: 5084401 (1992-01-01), Hagino
patent: 5173435 (1992-12-01), Harada
patent: 5302537 (1994-04-01), Strack
patent: 5380670 (1995-01-01), Hagino

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