Method for manufacturing ferroelectric random access memory...

Details Method for manufacturing ferroelectric random access memory... Method for manufacturing ferroelectric random access memory...

2005-02-01

2005-02-01

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000, C438S250000, C438S393000

Reexamination Certificate

active

06849468

ABSTRACT:
The method for manufacturing an FeRAM capacitor having an enhanced adhesive property between a dielectric layer and a bottom electrode and a grain uniformity of the dielectric layer, is employed by forming hillocks on the bottom electrode purposefully before formation of the dielectric layer. The method includes steps of: preparing an active matrix obtained by predetermined processes; forming a first bottom electrode on the active matrix; forming a third ILD on exposed surfaces of the first bottom electrode and the second ILD; planarizing the third ILD till a top face of the first bottom electrode is exposed; forming a second bottom electrode on a top face of the bottom electrode; carrying out a first annealing process for deforming a surface of the second bottom electrode; forming a dielectric layer on exposed surfaces of the first bottom electrodes, the second bottom electrode and the third ILD; carrying out a second annealing process; and forming a top electrode on the dielectric layer.

REFERENCES:
patent: 6022774 (2000-02-01), Kawai et al.
patent: 6156623 (2000-12-01), Hendrix et al.
patent: 6440754 (2002-08-01), Hayashi et al.
patent: 6514835 (2003-02-01), Hendrix et al.
patent: 6548343 (2003-04-01), Summerfelt et al.
patent: 6576546 (2003-06-01), Gilbert et al.
patent: 6677217 (2004-01-01), Joo et al.

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