Method for manufacturing ferroelectric memory

Details Method for manufacturing ferroelectric memory Method for manufacturing ferroelectric memory

2007-07-23

2009-06-30

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S680000, C438S692000, C257SE21170, C257SE21267, C257SE21304, C257SE21645

Reexamination Certificate

active

07553677

ABSTRACT:
A method for manufacturing a ferroelectric memory includes the steps of: (a) forming a ferroelectric capacitor by sequentially laminating, on a substrate, a lower electrode, a ferroelectric layer and an upper electrode; (b) forming a first dielectric layer that covers the ferroelectric capacitor; (c) forming a contact hole in the first dielectric layer to expose the upper electrode; (d) heating the substrate to 350° C. or higher; and (e) forming a conductive layer inside the contact hole.

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