Method for manufacturing fast bipolar transistors

Details Method for manufacturing fast bipolar transistors Method for manufacturing fast bipolar transistors

1983-01-24

1985-01-22

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29578, 29580, 148 15, 148187, 148188, 148190, 357 34, 357 49, 357 50, 357 59, 357 90, 357 91, H01L 2120, H01L 21265

Patent

active

044950101

ABSTRACT:
Method for manufacturing a fast bipolar transistor, including a semiconductor body having a transistor formed therein including a base contact, an emitter zone, and a base zone, the base zone being subdivided into a first inner subregion disposed below the emitter zone and a second outer subregion including all other base regions and being disposed below the base contact, each of the subregions being separately doped to a given degree. The method for manufacturing the same includes the application of a layer of undoped polysilicon on top of a monocrystalline silicon substrate, and subsequently doping the polysilicon by ion implantation with one or more dopants, such as boron or arsenic, followed by a diffusion process for thermally diffusing the dopants into the silicon substrate, thereby creating emitter and base regions that are very small and thin, so that high frequency operation of the resulting transistor may be attained.

REFERENCES:
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patent: 4127931 (1978-12-01), Shiba
patent: 4319932 (1982-03-01), Jambotkar
Ho et al, "Doped Polysilicon Diffusion Source . . . ", I.B.M. Tech. Discl. Bull., vol. 20, No. 1, Jun. 1977, pp. 146-148.
Yeh, T. H., "Self-Aligned Integrated . . . Structures", I.B.M. Tech. Discl. Bull., vol. 22, No. 9, Feb. 1980, pp. 4047-4051.
Murrmann, H., "Modern Bipolar Technology . . . ICS", Siemens Forschungs-und Gitwickl, vol. 5, No. 6, 1976.
Panousis et al, "GIMIC-O-A Low cost Non-Epitaxial . . . Circuits", Intern. Electron Devices MTG, Wash., D.C., 1974, Abstract 2214, pp. 515-518.

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