Method for manufacturing epitaxial wafer

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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C438S692000, C257S618000

Reexamination Certificate

active

07998867

ABSTRACT:
An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and the chamfered surface is removed in a scratch removal process. Thus, no particles exist caused by a scratch, at a time of immersion in an etching solution in the device process, and thus a device yield is increased.

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