Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2011-08-16
2011-08-16
Malsawma, Lex (Department: 2892)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C257S618000
Reexamination Certificate
active
07998867
ABSTRACT:
An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and the chamfered surface is removed in a scratch removal process. Thus, no particles exist caused by a scratch, at a time of immersion in an etching solution in the device process, and thus a device yield is increased.
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Miura Tomonori
Takaishi Kazushige
Greenblum & Bernstein P.L.C.
Malsawma Lex
Sumco Corporation
Tran Thanh Y
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