Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2005-01-04
2005-01-04
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C438S745000, C438S753000, C073S514320
Reexamination Certificate
active
06838385
ABSTRACT:
This invention provides a method for manufacturing an electric capacitance type acceleration sensor capable of achieving high productivity in which a semiconductor manufacturing process is used. More specifically, this invention provides a method for manufacturing an electric capacitance type acceleration sensor comprising the steps of: forming a p-type low resistance layer12for diffusing thermally a boron ion by implanting the boron ion into the surface of an n-type single crystal silicon11; etching the p-type low resistance layer12to leave a beam part24and a part27to be a movable electrode; forming a silicon oxide layer13to be a sacrificial film, a fixed electrode layer15and a silicon nitride film layer17on the surface of the silicon substrate11; etching anisotrophically from the rear surface of the silicon substrate by KOH solution making the p-type low resistance layer stop etching; and forming a hollow layer19by removing the silicon oxide film16by using a hydrofluoric acid solution from the rear surface of the silicon substrate.
REFERENCES:
patent: 4574327 (1986-03-01), Wilner
patent: 4719538 (1988-01-01), Cox
patent: 5470797 (1995-11-01), Mastrangelo
patent: 5511428 (1996-04-01), Goldberg et al.
patent: 5569852 (1996-10-01), Marek et al.
patent: 5633552 (1997-05-01), Lee et al.
patent: 5677965 (1997-10-01), Moret et al.
patent: 5721377 (1998-02-01), Kurle et al.
patent: 6201284 (2001-03-01), Hirata et al.
patent: 10-173204 (1998-06-01), None
patent: 2000-022168 (2000-01-01), None
patent: 2000-298139 (2000-10-01), None
Chen Kin-Chan
Oki Electric Industry Co. Ltd.
Rabin & Berdo P.C.
LandOfFree
Method for manufacturing electric capacitance type... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing electric capacitance type..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing electric capacitance type... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3372541