Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1999-05-27
1999-11-30
Monin, Jr., Donald L.
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438239, 438253, 257300, 257303, 257306, 257532, H01L 2120, H01G 406
Patent
active
059941979
ABSTRACT:
A method for manufacturing the capacitor of a dynamic random access memory cell. The method includes the steps of first providing a substrate having field effect transistors thereon, and then forming a dielectric layer over the substrate. Next, a contact opening that exposes the source/drain region is formed in the dielectric layer, and then conductive material is deposited over the substrate, filling the contact opening to form a conductive layer. Thereafter, the conductive layer is patterned, and then a portion of the exposed dielectric layer is removed to form trenches that surround the conductive layer. In the subsequent step, conductive spacers are formed on the sidewalls of the trenches and the conductive layer. The conductive spacers and the conductive layer form the lower electrode structure of a capacitor.
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patent: 5796136 (1996-03-01), Shinkawata
patent: 5937307 (1999-08-01), Jenq et al.
Huang Jiawei
Monin, Jr. Donald L.
Pham Hoai V.
United Microelectronics Corp.
United Silicon Incorporated
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