Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2008-10-20
2010-11-02
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C257S059000, C257SE33001
Reexamination Certificate
active
07824939
ABSTRACT:
Etching is performed using mask layers formed by a multi-tone mask which is a light-exposure mask through which light is transmitted to have a plurality of intensity, in a method for manufacturing a display device including an inverted staggered thin film transistor with a channel-etched structure. Further, a gate wiring layer and a source wiring layer are formed over a substrate in the same step, and the source wiring layer is separated (disconnected) at an intersection of the gate wiring layer and the source wiring layer. The separated source wiring layers are connected to each other electrically through an opening (a contact hole) via a conductive layer formed over a gate insulating layer in the same step as formation of source and drain electrode layers.
REFERENCES:
patent: 4409134 (1983-10-01), Yamazaki
patent: 7023021 (2006-04-01), Yamazaki et al.
patent: 7223643 (2007-05-01), Ohnuma et al.
patent: 2003/0013236 (2003-01-01), Nakata et al.
patent: 2006/0275710 (2006-12-01), Yamazaki et al.
patent: 2006/0278875 (2006-12-01), Ohnuma et al.
patent: 2006/0290867 (2006-12-01), Ahn et al.
patent: 2007/0001225 (2007-01-01), Ohnuma et al.
patent: 2007/0023790 (2007-02-01), Ohnuma et al.
patent: 2007/0037070 (2007-02-01), Ohnuma et al.
patent: 2007/0085475 (2007-04-01), Kuwabara et al.
patent: 2007/0139571 (2007-06-01), Kimura
patent: 2007/0146592 (2007-06-01), Kimura
patent: 2007/0148936 (2007-06-01), Ohnuma
patent: 2007/0222936 (2007-09-01), Shih
patent: 2001-313397 (2001-11-01), None
patent: 2007-133371 (2007-05-01), None
C.W. Kim et al.; “42.1: A Novel Four-Mask-Count Process Architecture for TFT-LCDs”; SID Digest'00: SID International Symposium Digest of Technical Papers, vol. 31, pp. 1006-1009; May 2000.
Chiba Yoko
Fujikawa Saishi
Hosoya Kunio
Fish & Richardson P.C.
Munoz Andres
Pham Thanh V
Semiconductor Energy Laboratory Co,. Ltd.
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