Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including isolation structure
Reexamination Certificate
2010-12-03
2011-12-06
Ahmadi, Mohsen (Department: 2812)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including isolation structure
C438S355000, C438S359000, C438S404000, C438S405000, C257SE21088, C257SE21544, C257SE21564, C257SE21530, C257SE21532
Reexamination Certificate
active
08071454
ABSTRACT:
A method for manufacturing a dielectric isolation type semiconductor device comprises: forming a plurality of trenches in a first region on a major surface of a semiconductor substrate; forming a first dielectric layer on the major surface of the semiconductor substrate and a first thick dielectric layer in the first region by oxidizing a surface of the semiconductor substrate; bonding a semiconductor layer of a first conductive type to the semiconductor substrate via the first dielectric layer; forming a first semiconductor region by implanting an impurity into a part of the semiconductor layer above the first thick dielectric layer; forming a second semiconductor region by implanting an impurity of a second conductive type into a part of the semiconductor layer so as to surround the first semiconductor region separating from the first semiconductor region.
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Ahmadi Mohsen
Mitsubishi Electric Corporation
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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