Method for manufacturing contact hole for a nonvolatile semicond

Details Method for manufacturing contact hole for a nonvolatile semicond Method for manufacturing contact hole for a nonvolatile semicond

1996-03-29

1997-10-21

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437982, 437984, H01L 218247

Patent

active

056795904

ABSTRACT:
An SiO.sub.2 film and a PSG film are stacked on a semiconductor substrate. A contact hole is formed through the both films. An Si.sub.3 N.sub.4 film is formed on a side wall of the contact hole as a free ion Na.sup.+ blocking film. An aluminum wiring layer is formed in the contact hole. This arrangement prevents free ions Na.sup.+ from externally migrating through the SiO.sub.2 film and reaching a nonvolatile semiconductor memory cell during and after the formation of the contact hole.

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