Method for manufacturing compound semiconductor wafer and...

Details Method for manufacturing compound semiconductor wafer and... Method for manufacturing compound semiconductor wafer and...

2007-04-24

2007-04-24

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Mesa or stacked emitter

C438S312000, C438S317000, C257SE29030, C257SE29114

Reexamination Certificate

active

10524013

ABSTRACT:
A method for producing a compound semiconductor wafer used for production of HBT by vapor growth of a sub-collector layer, a collector layer, a base layer and an emitter layer in this turn on a compound semiconductor substrate using MOCVD method wherein the base layer is grown as a p-type compound semiconductor thin film layer containing at least one of Ga, Al and In as a Group III element and As as a Group V element under such growth conditions that the growth rate gives a growth determined by a Group V gas flow rate-feed.

REFERENCES:
patent: 2001/0026971 (2001-10-01), Fujita et al.
patent: 2002/0163014 (2002-11-01), Welser et al.
patent: 390552 (1990-10-01), None
patent: 977245 (2000-02-01), None
patent: 57-92526 (1982-06-01), None
patent: 3-110829 (1991-05-01), None
patent: 6-236852 (1994-08-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing compound semiconductor wafer and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing compound semiconductor wafer and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing compound semiconductor wafer and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3764721