Method for manufacturing compound semiconductor substrate,...

Details Method for manufacturing compound semiconductor substrate,... Method for manufacturing compound semiconductor substrate,...

2011-08-23

2011-08-23

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C257S101000, C257SE21366

Reexamination Certificate

active

08003421

ABSTRACT:
A method for manufacturing a compound semiconductor substrate includes at least the processes of epitaxially growing a quaternary light emitting layer composed of AlGaInP on a GaAs substrate; vapor-phase growing a p-type GaP window layer on a first main surface of the quaternary light emitting layer, the first main surface being opposite to the GaAs substrate; removing the GaAs substrate; and epitaxially growing an n-type GaP window layer on a second main surface of the light emitting layer, the second main surface being located at a side where the GaAs substrate is removed. The method includes the process of performing a heat treatment under a hydrogen atmosphere containing ammonia after the process of removing the GaAs substrate and before the process of epitaxially growing the n-type GaP window layer.

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Feb. 10, 2009 Search Report issued in International Patent Application No. PCT/JP2009/000101 (with translation).

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