Method for manufacturing compound semiconductor devices includin

Details Method for manufacturing compound semiconductor devices includin Method for manufacturing compound semiconductor devices includin

1989-12-22

1993-10-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

2041295, H01L 21302

Patent

active

052504719

ABSTRACT:
A method for manufacturing a compound semiconductor device in which a mixed crystal layer containing a III-V group compound is formed on a substrate, characterized in that when a part of the mixed crystal layer is subjected to etching by an etching liquid, the etching portion is subjected to etching while maintaining the state of not exposing light to the etching portion.

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"Kinetics and Morphology of GaAs Etching in Aqueous CrO.sub.3 -HF Solutions", J. van de Ven, Journal of the Electrochemical Society, vol. 133, No. 4, Apr. 1986, Manchester, N.H.
"Reduction of Surface Stacing Faults on N-Type <100> Silicon Wafers", P. W. Koob, Journal of the Electrochemical Society, vol. 133, No. 4, Apr. 1986, Manchester, N.H.
"Revealing of defects in InP by shallow (submicron) photoetching", J. L. Weyher, Journal of Applied Physics, vol. 58, No. 1, Jul. 1985, Woodbury, New York.

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