Method for manufacturing compound semiconductor devices

Details Method for manufacturing compound semiconductor devices Method for manufacturing compound semiconductor devices

1977-08-18

1978-09-26

Ozaki, G.

Metal treatment

Compositions

Heat treating

148175, 148187, 156628, 204 56R, H01L 2126

Patent

active

041167228

ABSTRACT:
A method for manufacturing compound semiconductor devices includes a step of forming a first oxidized film on a GaAs body and heating it at a high temperature. A second oxidized film is thereafter formed on the body which includes the first oxidized film so as to change it properties, for example, to be easily etched with an etchant.

REFERENCES:
patent: 2686279 (1954-08-01), Barton
patent: 3640806 (1972-02-01), Watanabe et al.
patent: 3798139 (1974-03-01), Schwartz
patent: 3844904 (1974-10-01), Yahalom
patent: 3859178 (1975-01-01), Logan et al.
patent: 3890169 (1975-06-01), Schwartz et al.
patent: 3967981 (1976-07-01), Yamazaki
patent: 3971710 (1976-07-01), Romankiw
patent: 4033788 (1977-07-01), Hunsperger et al.
Japanese J. of Applied Physics, vol. 16, Supplement 16-1, pp. 471-474 (1977).
J. Electrochem. Soc., vol. 123, No. 5, pp. 713-723, May 1976.

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