Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2007-09-05
2010-06-15
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S369000, C438S370000, C438S406000, C257SE21561, C257SE21567, C257SE21568
Reexamination Certificate
active
07736994
ABSTRACT:
The invention relates to a method for manufacturing compound material wafers, in particular, silicon on insulator type wafers, by providing an initial donor substrate, forming an insulating layer over the initial donor substrate, forming a predetermined splitting area in the initial donor substrate, attaching the initial donor substrate onto a handle substrate and detaching the donor substrate at the predetermined splitting area, thereby transferring a layer of the initial donor substrate onto the handle substrate to form a compound material wafer. In order to be able to reuse the donor substrate more often, the invention proposes to carry out the thermal treatment step to form the insulating layer at a temperature of less than 950° C., in particular, less than 900° C., and preferably at 850° C. The invention also relates to a silicon on insulator type wafer manufactured according to the inventive method.
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Copending U.S. Appl. No. 11/850,170, filed Sep. 5, 2007 and office Actions therein.
Kononchuk Oleg
Reynaud Patrick
Stinco Michael
Garber Charles D
Lee Cheung
S.O.I.Tec Silicon on Insulator Technologies
Winston & Strawn LLP
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